View WCFS0808C1E-JC15_1335912.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

S0808C1E
WCFS0808C1E
32K x 8 Static RAM
Features
* High speed -- 12 ns * Fast tDOE * CMOS for optimum speed/power * Easy memory expansion with CE and OE features * TTL-compatible inputs and outputs * Automatic power-down when deselected an automatic power-down feature, reducing the power consumption by 81% when deselected. The WCFS0808C1E is in the standard SOJ package. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. A die coat is used to improve alpha immunity.
Functional Description
The WCFS0808C1E is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has
Logic Block Diagram
Pin Configurations
SOJ Top View
I/O0
INPUT BUFFER
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
CE WE OE
I/O1
ROW DECODER
I/O2
SENSE AMPS 1024 x 32 x 8 ARRAY
I/O3 I/O4 I/O5
COLUMN DECODER
POWER DOWN
I/O6 I/O7
A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A4 A3 A2 A1 OE A0 CE I/O7 I/O6 I/O5 I/O4 I/O3
A 10
A 12 A 13
A 11
Selection Guide
Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) WCFS0808C1E 12ns 12 160 10 WCFS0808C1E 15ns 15 155 10
A 14
Revised February 18, 2002
WCFS0808C1E
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential (Pin 28 to Pin 14) ........................................... -0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] .................................... -0.5V to VCC + 0.5V DC Input Voltage[1] ................................ -0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA
Operating Range
Range Commercial Ambient Temperature[2] 0C to +70C VCC 5V 10%
Electrical Characteristics Over the Operating Range[3]
WCFS0808C1E 12ns Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current-- TTL Inputs Automatic CE Power-Down Current-- CMOS Inputs GND < VI < VCC GND < VO < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Com'l Test Conditions VCC = Min., IOH=-4.0 mA VCC = Min., IOL=8.0 mA 2.2 -0.5 -5 -5 Min. 2.4 0.4 VCC +0.3V 0.8 +5 +5 160 2.2 -0.5 -5 -5 Max. WCFS0808C1E 15ns Min. 2.4 0.4 VCC +0.3V 0.8 +5 +5 155 Max. Unit V V V V A A mA
ISB1
Com'l Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX Com'l Max. VCC, CE > VCC - 0.3V VIN > VCC - 0.3V or VIN < 0.3V, f = 0
30
30
mA
ISB2
10
10
mA
]
Capacitance[1]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF
Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. TA is the "instant on" case temperature. 3. See the last page of this specification for Group A subgroup testing information. 4. Tested initially and after any design or process changes that may affect these parameters.
Page 2 of 10
WCFS0808C1E
AC Test Loads and Waveforms[5]
R1 481 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 255 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE R2 255 3.0V 10% GND
tr
R1 481 ALL INPUT PULSES 90% 90% 10%
tr
C199-5
(a)
(b)
Equivalent to:
THEVENIN EQUIVALENT 167 1.73V
OUTPUT
Data Retention Characteristics (Over the Operating Range)
Parameter VDR tCDR[1] tR
[5]
Description VCC for Data Retention
Conditions[6]
Min. 2.0 0 200
Max.
Unit V ns s
Chip Deselect to Data Retention Time VCC = VDR = 2.0V, CE > VCC - 0.3V, Operation Recovery Time VIN > VCC - 0.3V or VIN < 0.3V
Data Retention Waveform
DATA RETENTION MODE VCC 3.0V tCDR CE VDR > 2V 3.0V tR
Note: 5. tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds 6. No input may exceed VCC + 0.5V.
Page 3 of 10
WCFS0808C1E
Switching Characteristics Over the Operating Range[3, 7]
WCFS0808C1E 12ns Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z CE LOW to Low Z
[8]
WCFS0808C1E 15ns Min. 15 Max. Unit ns 15 3 15 7 0 7 3 7 0 15 15 10 10 0 0 9 9 0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 3 ns ns
Description
Min. 12
Max.
12 3 12 5 0 5 3 5 0 12 12 9 9 0 0 8 8 0 7 3
OE HIGH to High Z[8, 9]
[8] [8,9]
CE HIGH to High Z
CE LOW to Power-Up CE HIGH to Power-Down Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE LOW to High Z
[9] [8]
WRITE CYCLE[10, 11]
WE HIGH to Low Z
Notes: 7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Page 4 of 10
WCFS0808C1E
Read Cycle No. 1[12, 13]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
Read Cycle No. 2 [13, 14]
CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tPD ICC 50% ISB tHZOE tHZCE DATA VALID tRC
HIGH IMPEDANCE
DATA OUT
Notes: 12. Device is continuously selected. OE, CE = VIL 13. .WE is HIGH for read cycle
Page 5 of 10
WCFS0808C1E
Write Cycle No. 1 (WE Controlled)[10, 15, 16]
tWC ADDRESS
CE tAW WE tSA tPWE tHA
OE tSD DATA I/O tHZOE DATAIN VALID tHD
Write Cycle No. 2 (CE Controlled)[10, 15, 16]
tWC ADDRESS CE tSA tAW tHA tSCE
WE tSD DATA I/O DATA IN VALID tHD
Notes: 14. Address valid prior to or coincident with CE transition LOW. 15. Data I/O is high impedance if OE = VIH. 16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
Page 6 of 10
WCFS0808C1E
Write Cycle No. 3 (WE Controlled OE LOW)[11, 16]
tWC ADDRESS
CE tAW WE tSA tHA
tSD DATA I/O tHZWE DATAIN VALID
tHD
tLZWE
Typical DC and AC Characteristics
OUTPUT SOURCE CURRENT (mA) NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.0 ISB 4.5 5.0 5.5 6.0 VIN =5.0V TA =25C ICC NORMALIZED ICC,I SB NORMALIZED ICC,I SB 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -55 ISB 25 125 VCC =5.0V VIN =5.0V NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE ICC OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 VCC =5.0V TA =25C
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (C)
OUTPUT VOLTAGE (V)
OUTPUT SINK CURRENT (mA)
NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 NORMALIZED t AA NORMALIZED t AA 1.3 1.2 1.1 TA =25C 1.0 0.9 0.8 4.0 4.5 5.0 5.5 6.0 1.6 1.4 1.2 1.0
NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 140 120 100 80 60 40 20
OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE
VCC =5.0V 0.8 0.6 -55
VCC =5.0V TA =25C
25
125
0 0.0
1.0
2.0
3.0
4.0
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (C)
OUTPUT VOLTAGE (V)
Page 7 of 10
WCFS0808C1E
Typical DC and AC Characteristics (continued)
TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 3.0 NORMALIZED I PO DELTA t AA (ns) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 30.0 NORMALIZED I CC 25.0 20.0 15.0 10.0 5.0 0.0 0 200 400 600 800 1000 0.50 10 20 30 40 VCC =4.5V TA =25C TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.25 VCC =5.0V TA =25C VIN =0.5V NORMALIZED I CC vs. CYCLE TIME
1.00
0.75
SUPPLY VOLTAGE (V)
CAPACITANCE (pF)
CYCLE FREQUENCY (MHz)
Truth Table
CE H L L L WE X H L H OE X L X H Inputs/Outputs High Z Data Out Data In High Z Read Write Deselect, Output Disabled Mode Deselect/Power-Down Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC)
Ordering Information
Speed (ns) 12 15 Ordering Code WCFS0808C1E-JC12 WCFS0808C1E-JC15 Package Name J J Package Type 28-Lead Molded SOJ 28-Lead Molded SOJ Operating Range Commercial
Page 8 of 10
WCFS0808C1E
Package Diagrams
28-Lead (300-Mil) Molded SOJ,J
Page 9 of 10
WCFS0808C1E
Document Title: WCFS0808C1E 32K x 8 Static RAM REV. ** Issue Date 4/16/2002 Orig. of Change XFL Description of Change New Datasheet
Page 10 of 10

▲Up To Search▲

Price & Availability of WCFS0808C1E-JC15

	To Download WCFS0808C1E-JC15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .